Optical characterization of InAs delta-layers grown by MBE at different substrate temperatures
نویسندگان
چکیده
InAs layers with thickness of 1 monolayer (d-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the d-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs d-layers embedded in between 60 nmthick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width. r 2008 Elsevier Ltd. All rights reserved.
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عنوان ژورنال:
- Microelectronics Journal
دوره 39 شماره
صفحات -
تاریخ انتشار 2008